Work

Recent Progress in Cryogenic MOSFETs for Qubit Control and Readout Circuits

Year: 2024

Type: article

Source: The Journal of the Institute of Electrical Engineers of Japan

DOI: 10.1541/ieejjournal.145.38

Authors: Hiroshi OKA, Takumi INABA, Hidehiro ASAI, Takahiro MORI

Institution: National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: 極低温環境下におけるSi-MOS界面散乱体の起源解明に向けた定量化手法の確立

OpenAlex ID: W4405929777

FWCI: 0.104

Cites: 13

Cited by: 1

Related to: 10