Work

15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3524540

Authors: Shiming Li, Mei Wu, Ling Yang, Bowen Yang, Haolun Sun, Meng Zhang, Bin Hou, Hao Lu, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: G1523594171, G2408319543, G3372063648, G4142207067, G4877702549, G5536712496, G5752182232, G6950084816, G704711181

OpenAlex ID: W4405934703

FWCI: 1.881

Cites: 30

Cited by: 13

Related to: 10