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Advanced Design and Optimization of CNTFET-Based SRAM Circuits Using a 180nm Process Design Ki

Year: 2024

Type: conference-paper

Source: International Conference on Integrated Circuits and Microsystems (ICICM)

DOI: 10.1109/icicm63644.2024.10814184

Authors: Yuyan Zhang, Zhifeng Chen, Chengying Chen, Jianhua Jiang

Institutions: Peking University, Xiamen University of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Natural Science Foundation of Fujian Province

Award: G5235685529

OpenAlex ID: W4405935557

FWCI:

Cites: 8

Cited by:

Related to: 10