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A V-Band Power Amplifier with 28.2% PAE and 21.4 dBm Output Power in 65-nm CMOS

Year: 2024

Type: conference-paper

Source: IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications

DOI: 10.1109/mape62875.2024.10813754

Authors: Hao Xu, Pei Qin, Haoshen Zhu, Xiang Yi, Wenquan Che, Quan Xue

Institution: South China University of Technology

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405936217

FWCI:

Cites: 7

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Related to: 10