Work

Effect of Hydrogen Doping on the Photoelectronic Properties of Indium Oxide Thin Films

Year: 2024

Type: conference-paper

DOI: 10.1109/acp/ipoc63121.2024.10809651

Authors: Jialiang Li, Chenxingyu Huang, Hong Jin, Haosheng Xiao, H. Y. Fu, Lei Lu, Qian Li

Institutions: Peking University, Tsinghua Shenzhen International Graduate School, Tsinghua University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Science, Technology and Innovation Commission of Shenzhen Municipality, Shenzhen International Cooperation Research Project

Awards: G2221237248, G4681376191

OpenAlex ID: W4405936220

FWCI:

Cites: 16

Cited by:

Related to: 10