Work

Degration Behavior and Mechanism Analysis of AlGaN/GaN HEMTs After RF Overdrive Stress

Year: 2024

Type: conference-paper

Source: IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications

DOI: 10.1109/mape62875.2024.10813782

Authors: Jinkang Lian, Chang Liu, Yiqiang Chen, Xiuyin Zhang

Institutions: South China University of Technology, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405936229

FWCI: 2.415

Cites: 21

Cited by: 2

Related to: 10