Work

Effect of Sc Concentration on the Memory Window in Al1-xScxN/Two-Dimensional Channel Ferroelectric Field-Effect Transistors

Year: 2024

Type: conference-paper

Source: International Conference on Integrated Circuits and Microsystems (ICICM)

DOI: 10.1109/icicm63644.2024.10814541

Authors: Zexin Ding, Yuxi Liu, Xin Liu, Guoming Zhang, Nan Wang, Qinghua Ren

Institution: Shanghai University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1509452141

OpenAlex ID: W4405936348

FWCI:

Cites: 17

Cited by:

Related to: 10