Work

Study on Laser Lift-Off of GaN HEMTs Grown on Fe-doped and Unintentional Doped Buffer Layer

Year: 2024

Type: conference-paper

Source: International Conference on Integrated Circuits and Microsystems (ICICM)

DOI: 10.1109/icicm63644.2024.10814270

Authors: Fen Guo, Rengang Li, Tuo Li, Xiaofeng Zou, Yongzheng Zhan, Changhong Wang, Feng Ren

Institutions: Chinese Academy of Sciences, Aerospace Information Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405937213

FWCI:

Cites: 16

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Related to: 10