Work

Repair of H + Implantation Induced Defects in SiC Single Crystal Film Fabricated by Crystal-Ion-Slicing Technique

Year: 2024

Type: conference-paper

Source: International Conference on Integrated Circuits and Microsystems (ICICM)

DOI: 10.1109/icicm63644.2024.10814513

Authors: Dailei Zhu, Wenbo Luo, Sijie Yang, Yao Shuai, Chuangui Wu, Wanli Zhang

Institution: University of Electronic Science and Technology of China

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405938102

FWCI:

Cites: 23

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Related to: 10