Work

High-Throughput Information Storage in an Intelligent Response Phosphor

Year: 2024

Type: article

Abstract: Persistent phosphor has emerged as a promising candidate for information storage due to rapid accessibility and low-energy requirements. However, the low storage capacity has limited its practical application. Herein, we skillfully designed and developed NaGdGeO 4:Pb 2+,Tb 3+ stimulated phosphor by trace doped Sm 3+ . As expected, this phosphor demonstrates a larger carrier capacity than traditional commercial SrAl 2 O 4:Eu 2+,Dy 3+ phosphors and superstrong thermostimulated luminescence (TSL) that is three times greater than its photoluminescence (PL) intensity (PL efficiency, 17.3%). A mechanism of the enhanced and controllable TSL is proposed based on electron–hole defect pair structure. We further present a high-throughput optical data recording in five dimensions in a single fluorescent film recording layer. The findings described here provide not only a universal approach for constructing TSL materials but also a new paradigm for future generation optical storage technology.

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c16548

Authors: Dangli Gao, Zhigang Wang, Xiangyu Zhang, Qing Pang, Xiaojun Wang

Institutions: Xi'an University of Architecture and Technology, Chang'an University, Georgia Southern University

Language: English

Topic: Luminescence Properties of Advanced Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Natural Science Foundation of China, Shaanxi Key Science and Technology Innovation Team Project

Awards: G1861436375, G5799517970