Work

$L_{g}=10$ nm Gate all Around Si Based Nanowire MOSFET for High Performance Computing

Year: 2024

Type: conference-paper

DOI: 10.1109/csitss64042.2024.10817005

Authors: A S Augustine Fletcher, R Tamilarasi, G Saranya, Murugapandiyan

Institutions: SRM Institute of Science and Technology, Rajalakshmi Engineering College, Anil Neerukonda Institute of Technology & Sciences

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405974615

FWCI:

Cites: 22

Cited by:

Related to: 10