Work

Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs

Year: 2024

Type: article

Source: Journal of Semiconductors

DOI: 10.1088/1674-4926/24060009

Authors: Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han

Institutions: Chongqing University of Posts and Telecommunications, China Resources (China), Xidian University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4406103340

FWCI:

Cites: 16

Cited by:

Related to: 10