Year: 2025
Type: article
Abstract: The field of ultra-wide bandgap (UWBG) semiconductors is experiencing a transformative era, driven by the relentless pursuit of materials and technologies that promise to revolutionize power electronics, optoelectronics, and beyond.This special issue brings together a collection of pioneering review and research articles that highlight the latest advancements and future directions in UWB semiconductor technology.The articles compiled in this issue underscore the remarkable potential of UWBG semiconductors to address critical challenges in materials science and device engineering.From deep ultraviolet optoelectronics to high-temperature electronic applications, the research demonstrates the versatility and unprecedented performance characteristics of these advanced materials.The diversity of approaches represented here is also striking.Researchers have explored multiple material systems-including AlGaN, Ga2O3, and novel oxide semiconductors-each offering unique capabilities that extend the boundaries of traditional semiconductor technologies.The breadth of investigations ranges from fundamental material characterization to device engineering, reflecting the interdisciplinary nature of modern materials research.In "Thermal Stability of Schottky Contacts and Rearrangement of Defects in 𝛽-Ga2O3 Crystals" (aelm.202300428),P. Seyidov and co-authors investigate the thermal stability of Schottky contacts (Au, Pt, Ni) on 𝛽-Ga2O3 single crystals.The study reveals critical insights into defect levels and material behavior under thermal stress, identifying defect levels and discussing the rearrangement and dissociation of hydrogen in Ga-O divacancy
Source: Advanced Electronic Materials
Authors: Siddharth Rajan, Xiaohang Li
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
OpenAlex ID: W4406146930