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Origin of Enhanced Photoelectrochemical Activity of the n‐CdS/p‐type Semiconductor Interface: Homojunction or Heterojunction? (Small 1/2025)

Year: 2025

Type: article

Abstract: Photoelectrochemical Cells The efficiency of a p-type photocathode in a photoelectrochemical (PEC) cell can be enhanced by introducing a buried p–n junction due to unintentional Cd doping during CdS formation rather than the CdS/p-semiconductor heterojunction itself. For the first time, a homojunction in CuInS2 was demonstrated using Cd doping for PEC H2 production. More in article number 2405048, Jin Young Kim, Eun Duck Park, and co-workers.

Source: Small

DOI: 10.1002/smll.202570002

Authors: Sang Youn Chae, Minki Jun, Noyoung Yoon, Oh Shim Joo, Jin Young Kim, Eun Duck Park

Institutions: Ajou University, Korea Institute of Science and Technology, Yonsei University

Language: English

Topic: Advanced Photocatalysis Techniques

Subfield: Renewable Energy, Sustainability and the Environment

Field: Energy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

OpenAlex ID: W4406184568

FWCI:

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