Year: 2024
Type: article
Abstract: This paper details the design, fabrication, and characterization of a single-pole-single-throw (SPST) switch leveraging Aluminum Nitride/Gallium Nitride/Aluminum Gallium Nitride High Electron Mobility Transistor (AlN/GaN/AlGaN HEMT) technology specifically tailored for Ku to V-band satellite applications. The switch targets high-frequency operation within the 40 GHz to 75 GHz range to satisfy the demanding specifications of satellite communication systems. The design integrates AlN, GaN, and AlGaN layers to capitalize on the superior electrical properties of GaN-based transistors while guaranteeing robust isolation and performance enhancement through AlN and AlGaN integration. Design optimization focuses on achieving high isolation, minimal insertion loss and fast switching speeds - all primordial parameters for satellite communication links. Characterization simulations explore improvements in key metrics such as insertion loss, isolation, and switching time at V-band frequencies. In addition, the switch's performance is evaluated under varying temperature and radiation conditions to ensure reliability and suitability for space environments. Early findings suggest favorable performance attributes, hinting at the potential of the proposed SPSPT switch for V-band satellite applications, thereby contributing the progression of space-based RF technology.
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4406219932