Work

Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025)

Year: 2025

Type: article

Abstract: 2D Tellurium Goes Memristive 2D tellurium showcases remarkable characteristics, including simplicity in its chemistry, structure, and synthesis, making it ideal for a wide range of applications. In article number 2406703, Christian Martella, Deji Akinwande, Alessandro Molle, and co-workers present the first memristor design utilizing nanoscaled tellurium, synthesized via vapor transport deposition at a temperature as low as 100 °C directly on gold substrates. This method ensures full compatibility with back-end-of-line processing.

Source: Advanced Science

DOI: 10.1002/advs.202570006

Authors: Sara Ghomi, Christian Martella, Yoonseok Lee, Penny Hui‐Ping Chang, Paolo Targa, Andrea Serafini, Davide Codegoni, Chiara Massetti, Sepideh Gharedaghi, Alessio Lamperti, Carlo Grazianetti, Deji Akinwande, Alessandro Molle

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $6,730

OpenAlex ID: W4406220324

FWCI: 0.462

Cites:

Cited by: 2

Related to: 10