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Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge (Adv. Sci. 1/2025)

Year: 2025

Type: article

Abstract: Terahertz Field Enhancement-Induced Nanobridge The unique nanobridge crossing the entire induced current channel of a metamaterial could be realized by the strongly localized and enhanced terahertz light with the great assistance of a long slot type resonator with nanotips under ultralow threshold. In article number 2405225 by Myung-Ki Kim, Minah Seo, and co-workers, a novel phenomenon known as carrier multiplication, which induces resonance switching, is observed. Such discovery carries the potential for significant implications and insights into advanced terahertz technologies.

Source: Advanced Science

DOI: 10.1002/advs.202570002

Authors: Sang‐Hun Lee, Moohyuk Kim, Yeeun Roh, Myung‐Ki Kim, Minah Seo

Language: English

Topic: Metamaterials and Metasurfaces Applications

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: gold

Estimated APC paid: $6,730

OpenAlex ID: W4406220570

FWCI:

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