Work

Development of TiN/AlN-Based Superconducting Qubit Components

Year: 2024
Type: conference-paper
Abstract: This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiN$I$AlN$I$TiN junctions yielded values ranging from 150$\mu \mathbf{A}$to 2$\mu \mathbf{A}$, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.
Authors: Benedikt Schoof, Moritz Singer, Simon Lang, Harsh Gupta, Daniela Zahn, Johannes Weber, Marc Tornow
Language: English
Open Access status: green
OpenAlex ID: W4406261431
FWCI: 2.694
Cites: 17
Cited by: 1
Related to: 10