Work

Steep Subthreshold Swing Nanoscale Tunnel FET Based on Silicon Tin Channel and High-k Dielectric Gate

Year: 2024

Type: conference-paper

Source: International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

DOI: 10.1109/cce62852.2024.10771078

Authors: H. Ferhati, F. Djeffal, T. Berghout

Institutions: Larbi Ben M'hidi University of Oum El Bouaghi, University of Batna 2

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406264809

FWCI: 0.806

Cites:

Cited by: 1

Related to: 10