Work

Performance Assessment of Nanoscale SiGe High-k Negative Capacitance Junctionless GAA MOSFETs

Year: 2024

Type: conference-paper

Source: International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

DOI: 10.1109/cce62852.2024.10771020

Authors: R. Ouchen, I. Rahmani, H. Ferhati, F. Djeffal

Institutions: University of Batna 2, Research Center in Industrial Technologies, Larbi Ben M'hidi University of Oum El Bouaghi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4406265212

FWCI: 0.806

Cites:

Cited by: 1

Related to: 10