Work

Ternary Memory Composed of Ferroelectric Field-Effect Transistor Based on Dynamic Logic

Year: 2024

Type: conference-paper

DOI: 10.1109/eit63098.2024.10762250

Authors: Zhichao Dong, Yinshui Xia, Yang Li, Zhaohui Yang

Institution: Ningbo University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Zhejiang Province

OpenAlex ID: W4406265869

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