Work

Enhancing Ohmic Contacts in GaN HEMT Through Optimization of Ramp-Up Rate in Annealing Process

Year: 2024

Type: conference-paper

Source: International Conference on Information and Communication Technology Convergence (ICTC)

DOI: 10.1109/ictc62082.2024.10826788

Authors: Junhyung Kim, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Junhyung Jeong, Hong-Gu Ji, Woojin Chang, Jong-Min Lee, Dong-Min Kang

Institution: Electronics and Telecommunications Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406355259

FWCI: 1.159

Cites: 6

Cited by: 1

Related to: 10