Work

Improving Z-Interference and Program Disturbance in 3D NAND Flash Memory using Asymmetric Program-pass Voltage

Year: 2024

Type: article

Source: JSTS Journal of Semiconductor Technology and Science

DOI: 10.5573/jsts.2024.24.6.565

Authors: Hyeon-Seo Yun, Jong-Kyung Park

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406406065

FWCI: 0.206

Cites:

Cited by: 2

Related to: 10