Work

Design and Performance Analysis of a Ge/GaAs/Si-Based DG-JL-TFET for Ultra Low Power Applications

Year: 2024

Type: conference-paper

Source: International Conference on Computing, Sciences and Communications (ICCSC)

DOI: 10.1109/iccsc62048.2024.10830333

Authors: Tamilarasi R, Karthik S

Institution: SRM Institute of Science and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406418177

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Cites: 14

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Related to: 10