Work

Monolithic Integrated p-GaN HEMT with Lateral Rectifier to Reduce the Dead Time Loss

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835278

Authors: Yufei Tian, XinHong Cheng

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406459713

FWCI:

Cites: 10

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Related to: 10