Work

Ultra-Thin Barrier Enhancement-Mode InAlN/GaN HEMTs on Sapphire Substrate with a DIBL of 5.2 mV/V

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835391

Authors: X. Wu, J. He, Z. Cheng, S. Xie, C. Mi, L. Zhang, H. Sun, Y. Zhang

Institution: Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406459728

FWCI: 4.638

Cites: 17

Cited by: 4

Related to: 10