Simulation Study on the Etching Depth of AlGaN/GaN Half-FinFETs
Year: 2024
Type: conference-paper
Authors: Ziheng Yu, Chong Wang, Mingzhi Huang, Ang Li, Kai Liu
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G704711181
OpenAlex ID: W4406459731