Work

Simulation on AlN/GaN/AlN/GaN Planar HEMT and Fin-HEMT for Low-Voltage Applications

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835385

Authors: Xiangle Jiang, Minhan Mi, Can Gong, Yuwei Zhou, Tianhao Liu, Xiaohua Ma

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406459742

FWCI:

Cites: 7

Cited by:

Related to: 10