Work

Simulation Study of p-GaN/AlGaN/GaN HEMTs with Composite NiO Gate

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835398

Authors: Qian Xiao, Bin Hou, Mao Jia, Ling Yang, Zhiqiang Xue, Yutong Jiang, Xiaohua Ma

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Fundamental Research Funds for the Central Universities

Awards: G4205054765, G7582775801, G8482235042

OpenAlex ID: W4406459747

FWCI:

Cites: 12

Cited by:

Related to: 10