Work

A Novel p-GaN Gate HEMT with p-Type Doping Concentration Graded Termination

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835374

Authors: Kuo Zhang, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Kai Liu, Wentao Zhang, Yue Hao

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G704711181

OpenAlex ID: W4406460103

FWCI:

Cites: 15

Cited by:

Related to: 10