Work

Monolithically Integrated Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835317

Authors: Qingxin Liu, Kailin Ren, Luqiao Yin, Jianhua Zhang

Institution: Shanghai University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460105

FWCI:

Cites: 17

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Related to: 10