Work

Design and Demonstration of a Novel 4H-SiC Full-P Encapsulated Trench MOSFET with Three-Level Protection Multi-Step Gate Trench Structure

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835338

Authors: Yangyang Wu, Jun Yuan, Fei Guo, Kuan Wang, Zhijie Cheng, Wei Chen, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460109

FWCI: 0.806

Cites: 8

Cited by: 1

Related to: 10