Work

A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835377

Authors: Wenqing Lu, Luqiao Yin, Jianhua Zhang, Kailin Ren

Institution: Shanghai University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shanghai, National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G169195609, 面向高速功率集成电路的新型P沟道氮化镓基晶体管研究, G5637025066

OpenAlex ID: W4406460150

FWCI:

Cites: 18

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