Work

Analysis of the nFOM Value for GaN Power HEMT Device for Multi-Level Topology Applications

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835299

Authors: Senyuan Xu, Ying Wang, Yichao Wang, Jinwei Zhang, Zhuoran Luo, Jinbo Zhangxu, Dongyu Wang, Kai Dong, Hao Jiang, Yang Liu

Institutions: Sun Yat-sen University, Delta Electronics (China)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4406460157

FWCI:

Cites: 6

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Related to: 10