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Design and Fabrication of a 1.2kV 4H-SiC Trench-Gate Accumulation Channel Mosfet

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835263

Authors: Zhijie Cheng, Jun Yuan, Fei Guo, Kuan Wang, Wei Chen, Yangyang Wu, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460189

FWCI:

Cites: 16

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Related to: 10