Work

Enhancing ON-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Nitrogen Plasma Treatment

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835389

Authors: Chunfeng Hao, Jiaan Zhou, Guohao Yu, Zhongming Zeng, Baoshun Zhang

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460205

FWCI:

Cites: 20

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Related to: 10