Work

AlGaN-Based Deep Ultraviolet Laser Diodes with Graded AlInGaN Last Quantum Barrier

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835360

Authors: Xien Sang, Fang Wang, Juin. J. Liou, Yuhuai Liu

Institutions: Zhengzhou University, North Minzu University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Sistema Nacional de Investigación, Secretaría Nacional de Ciencia, Tecnología e Innovación

Awards: G4408884853, G4714274332, G8072012953

OpenAlex ID: W4406460206

FWCI:

Cites: 12

Cited by:

Related to: 10