Work

Improved Linearity of GaN HEMT Based on Three-Dimensional Gate Modulation Optimization

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835355

Authors: Ting Meng, Minhan Mi, Can Gong

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Special Project for Research and Development in Key areas of Guangdong Province

Awards: G7628870424, G8465150280

OpenAlex ID: W4406460209

FWCI:

Cites: 7

Cited by:

Related to: 10