Work

Design and Fabrication of a Novel 1200V 4H-SiC Trench Bottom P Shielding MOSFET with Assisted Deep P Implantation by the Side

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835279

Authors: Wei Chen, Jun Yuan, Fei Guo, Kuan Wang, Yangyang Wu, Zhijie Chen, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4406460262

FWCI:

Cites: 14

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Related to: 10