Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode
Year: 2024
Type: conference-paper
Abstract: This article proposes a termination design for 4H-SiC Schottky Barrier Diodes (SBDs) that integrates uniformly distributed multiple P-type micro-island with multi-step. This design eliminates the need for high-energy ion implantation, reducing process costs. By optimizing the length$(\mathrm{L}_{\mathrm{P}})$, spacing$(\mathrm{S}_{\mathrm{P}})$, and number$(\mathrm{N}_{\mathrm{P}})$of the micro-island, along with the step lengths$(\mathrm{L}_{\text{step}})$and numbers$(\mathrm{n}_{\text{step}})$in the end relaxation region, the device reverse performance can be effectively improved. The study demonstrates that with an$\mathrm{L}_{\mathrm{P}} =12$μm,$\mathrm{S}_{\mathrm{P}} =3$μm,$\mathrm{N}_{P}=5, \mathrm{L}_{\text{step}}=8\mu \mathrm{m}$, and$\mathrm{n}_{\text{step}}=3$the electric field distribution is more uniform under a reverse voltage of 1200 V, achieving a terminal efficiency exceeding 90%. Furthermore, this configuration reduces the terminal area by over 16% compared to a structure comprising solely uniformly distributed P -type micro-islands.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4406460265