Work

Gan-Based Hemt-Type Multi-Functional Phototransistors

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835255

Authors: Lei Yang, Haochen Zhang, Fangzhou Liang, Haiding Sun

Institution: University of Science and Technology of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460271

FWCI:

Cites: 5

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Related to: 10