Work

Design and Simulation of Critical Structural Parameters of N-Polar GaN HEMT for High Frequency Applications

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835349

Authors: Xinyi Wen, Minhan Mi, Yuwei Zhou, Ruining Wang, Xiangxin Cao, Can Gong

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Key Research and Development Program of Ningxia, Key Technologies Research and Development Program of Guangzhou

Awards: G2280073694, G759589369

OpenAlex ID: W4406460285

FWCI:

Cites: 3

Cited by:

Related to: 10