Surge Current Behavior Analysis of Planar-Gate SiC MOSFET Under Positive Gate Bias Using TCAD Simulations
Year: 2024
Type: conference-paper
Authors: Zhichao Cheng, Ling Sang, Yawei He, Xiping Niu, Zheyang Li, Rui Jin
Institutions: Shandong University, State Grid Corporation of China (China)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4406460301