Work

Study of p-GaN Gate HEMT with ALN Cap Layer

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835364

Authors: Mingzhi Huang, Kai Liu, Chong Wang, Ziheng Yu

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G704711181

OpenAlex ID: W4406460308

FWCI: 1.16

Cites: 19

Cited by: 1

Related to: 10