Thin-Barrier E-Mode GaN-Based MIS-HEMT with High Saturation Current Using AlSiO Composite Gate Dielectric
Year: 2024
Type: conference-paper
Authors: Yun Lei, Nan Sun, Qingyuan Zuo, Shuxing Li, Jianyu Zhao, Jiayi Sun, Jianxun Dai, Yanhong Liu, Rong Han, Huolin Huang
Institution: Dalian University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4406460312