Design and Simulation of a Novel 1200 V 4H-SiC Trench Junction Barrier Schottky Diode
Year: 2024
Type: conference-paper
Abstract: Based on the low cost fabricated 650 V and 1200 V 4H-SiC Schottky barrier diode (SBD), technology computer-aided design (TCAD) of SBD model was calibrated to fit the measurement data. To achieve further performance improvement of a SBD, a novel junction barrier Schottky (JBS) diode structure that consists of a deep trench PN junction with dual-epitaxial layer process is proposed. Based on the calibrated TCAD SBD model, the new proposed dual-epitaxial trench JBS (DET-JBS) structure on the same overall epilayer thickness and doping as the fabricated 1200 V SBD, shows a 4 orders of magnitude lower leakage current and 45% higher breakdown voltage (BV). Moreover, achieving a low leakage JBS diode with 14% higher BV compared to the planar JBS, without scarifying on the forward voltage (VF) performance.
Authors: Xinyu Yang, Handoko Linewih, Lingling Lai, Xiran Chen, Zhixin Liu, Lan Luo, Xiangang Xu, Jisheng Han
Institution: Shandong University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4406460360