Work

Improvement of 4H-SiC MOS Capacitor Reliability Under High Positive-Bias Stress by Low-Pressure Oxidation

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835283

Authors: Zhaoyi Wang, Zijie Lin, Jingang Li, Santai Xu, Wen Liu

Institution: Xi’an Jiaotong-Liverpool University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460430

FWCI:

Cites: 10

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Related to: 10