Work

Using Oxide Interlayer as Passivation for Ti/n+-GaN Ohmic Contact to Achieve Lower Contact Resistivity

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835388

Authors: Shujie Xie, Jiaheng He, Zhe Cheng, Xuankun Wu, Lian Zhang, Changxin Mi, Xiaohong Yang, Yun Zhang

Institutions: Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460448

FWCI:

Cites: 13

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Related to: 10