Work

High Resistivity Uniformity of n-Type 4H-SiC Substrates Grown by PVT Method

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835335

Authors: Xixi Xiong, Xianglong Yang, Guojie Hu, Xiaomeng Li, Hongyu Shao, Xuejian Xie, Guojian Yu, Xiufang Chen, Xiaobo Hu, Xiangang Xu

Institutions: Shandong University, State Key Laboratory of Crystal Materials

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460449

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Cites: 13

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Related to: 10