Work

Effect of Rapid Thermal Annealing on the Properties of $\mathbf{Al}_{2}\mathbf{O}_{3}$ Films Grown on $\mathbf{SiC}$ via Plasma-Enhanced Atomic Layer Deposition

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835336

Authors: Yunduo Guo, Anfeng Wang, Qimin Huang, Zhenyu Wang, Xin Qi, Jon Qingchun Zhang, Hongping Ma

Institution: Fudan University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Science and Technology Innovation Plan Of Shanghai Science and Technology Commission

Awards: G2769300870, G7758200292

OpenAlex ID: W4406460457

FWCI:

Cites: 14

Cited by:

Related to: 10